The wide band gap direct band gap semiconductors, such as c-Si, GaN and InGaN, are promising for opto-electrical applications owing to their high electron/hole transport. Their high efficiency has opened up an opportunity of using these materials for solid-state lighting sources.
For example, GaN-based visible emitters can potentially replace conventional fluorescent lamps by generating white light with much higher efficacy of light energy to electricity conversion.
A general diode equation 0531ecd6aa

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Furthermore, the application allows you to save your experiment, so you can repeat the entire process at any time. As you can see, the application can be used in more than just two ways.
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